The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 18, 2012

Filed:

Jan. 06, 2010
Applicants:

Yasutaka Kuzumoto, Osaka, JP;

Shigeru Aomori, Osaka, JP;

Masatoshi Kitamura, Tokyo, JP;

Yasuhiko Arakawa, Tokyo, JP;

Inventors:

Yasutaka Kuzumoto, Osaka, JP;

Shigeru Aomori, Osaka, JP;

Masatoshi Kitamura, Tokyo, JP;

Yasuhiko Arakawa, Tokyo, JP;

Assignees:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic thin-film transistor of the present invention has a gate electrode, a gate insulating film, a source electrode, a drain electrode, and an organic semiconductor layer provided above a substrate, and further has a thiol compound layer composed of a benzenethiol compound and provided on a surface of the source electrode and a thiol compound layer composed of a benzenethiol compound and provided on a surface of the drain electrode. This makes it possible to provide an organic thin-film transistor whose threshold voltage can be selectively controlled without greatly affecting a current characteristic other than the threshold voltage.


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