The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jul. 14, 2010
Judy Xilin an, San Jose, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Judy Xilin An, San Jose, CA (US);
Zoran Krivokapic, Santa Clara, CA (US);
Haihong Wang, Fremont, CA (US);
Bin Yu, Cupertino, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A double gate germanium metal-oxide semiconductor field-effect transistor (MOSFET) includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, and a second gate formed adjacent a second side of the germanium fin opposite the first side. A triple gate MOSFET includes a germanium fin, a first gate formed adjacent a first side of the germanium fin, a second gate formed adjacent a second side of the germanium fin opposite the first side, and a top gate formed on top of the germanium fin. An all-around gate MOSFET includes a germanium fin, a first sidewall gate structure formed adjacent a first side of the germanium fin, a second sidewall gate structure formed adjacent a second side of the germanium fin, and additional gate structures formed on and around the germanium fin.