The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2012
Filed:
Jan. 27, 2010
Takao Nogi, Hyogo-ken, JP;
Tomoyuki Kitani, Kanagawa-ken, JP;
Akira Tojo, Kanagawa-ken, JP;
Kentaro Suga, Kanagawa-ken, JP;
Takao Nogi, Hyogo-ken, JP;
Tomoyuki Kitani, Kanagawa-ken, JP;
Akira Tojo, Kanagawa-ken, JP;
Kentaro Suga, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method for manufacturing a semiconductor apparatus includes: forming a protrusion made of a conductor on each of the electrodes provided on a semiconductor wafer top face side of a plurality of semiconductor devices formed in a semiconductor wafer; making a trench in the top face between the plurality of semiconductor devices; filling an insulator into a gap between the protrusions and into the trench to form a sealing member; grinding a bottom face of the semiconductor wafer opposing the top face until the sealing member being exposed to divide the semiconductor wafer into each of the semiconductor devices; forming a first lead made of a conductor on each of the protrusions, the first lead forming a portion of a first external electrode; forming a conductive material layer directly to form a second lead on the bottom face of the plurality of semiconductor devices, the second lead forming the second external electrode; and cutting the sealing member between the plurality of semiconductor devices to separate the plurality of semiconductor devices from each other.