The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8332569 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 11, 2012

Filed:

Jun. 22, 2010
Applicants:

Hyun-ju Kim, Seoul, KR;

Chang-eun Choi, Seoul, KR;

Taekeun Jeon, Seoul, KR;

Kyoung Ryun Bae, Seongnam-si, KR;

Inventors:

Hyun-Ju Kim, Seoul, KR;

Chang-Eun Choi, Seoul, KR;

Taekeun Jeon, Seoul, KR;

Kyoung Ryun Bae, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A memory system comprises a plurality of nonvolatile memory devices configured for interleaved access. Programming times are measured and recorded for various memory cell regions of the nonvolatile memory devices, and interleaving units are formed by memory cell regions having different programming times.


Find Patent Forward Citations

Kim, Hyun-Ju. (2012). Nonvolatile memory system using data interleaving scheme (U.S. Patent No. 8332569). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8332569

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