The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Apr. 22, 2010
Marc Schillgalies, Berlin, DE;
Stephan Lutgen, Dresden, DE;
Uwe Strauss, Bad Abbach, DE;
Osram Opto Semiconductors GmbH, Regensburg, DE;
Abstract
The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (), which comprises a waveguide region (), wherein the waveguide region () comprises a first waveguide layer (A), a second waveguide layer (B) and an active layer () arranged between the first waveguide layer (A) and the second waveguide layer (B) and serving for generating laser radiation (), and the waveguide region () is arranged between a first cladding layer (A) and a second cladding layer (B) disposed downstream of the waveguide region () in the growth direction of the semiconductor body (). The waveguide region () has a thickness d of 400 nm or less, and an emission angle of the laser radiation () emerging from the semiconductor body () in a direction parallel to the layer plane of the active layer () and the emission angle of the laser radiation () emerging from the semiconductor body () in a direction perpendicular to the layer plane of the active layer () differ from one another by less than a factor of 3.