The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jun. 23, 2010
Hiroyuki Ohmori, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Hiroyuki Ohmori, Kanagawa, JP;
Tetsuya Yamamoto, Kanagawa, JP;
Masanori Hosomi, Kanagawa, JP;
Yutaka Higo, Kanagawa, JP;
Kazutaka Yamane, Kanagawa, JP;
Kazuhiro Bessho, Kanagawa, JP;
Hiroshi Kano, Kanagawa, JP;
Minoru Ikarashi, Kanagawa, JP;
Yuki Oishi, Kanagawa, JP;
Shinichiro Kusunoki, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Abstract
A recording method of a nonvolatile memory including a recording circuit that electrically performs recording of information for an information memory device having a resistance change connected to a power supply for information recording, includes the steps of: recording information in a low-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is larger than a resistance value in the low-resistance state of the information memory device; and recording information in a high-resistance state by the recording circuit under a condition that an output impedance of the recording circuit for the information memory device is smaller than a resistance value in the high-resistance state of the information memory device.