The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jan. 31, 2011
Feng Miao, Mountain View, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Gilberto Medeiros Ribeiro, Menlo Park, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Feng Miao, Mountain View, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Gilberto Medeiros Ribeiro, Menlo Park, CA (US);
R. Stanley Williams, Portola Valley, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A method of changing a state of a memristor having a first intermediate layer, a second intermediate layer, and a third intermediate layer positioned between a first electrode and a second electrode includes applying a first pulse having a first bias voltage across the memristor, wherein the first pulse causes mobile species to flow in a first direction within the memristor and collect in the first intermediate layer thereby causing the memristor to enter into an intermediate state and applying a second pulse having a second bias voltage across the memristor, in which the second pulse causes the mobile species from the first intermediate layer to flow in a second direction within the memristor and collect in the third intermediate layer, wherein the flow of the mobile species in the second direction causes the memristor to enter into a fully changed state.