The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Mar. 05, 2009
Kazuhiro Shiba, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
Kazuhiro Shiba, Tokyo, JP;
Junichi Fujikata, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
The Si waveguideincludes a first conductivity-type Si layerand an intrinsic Si layer, and a second conductivity-type light-absorption layeris partially formed on an area thereof. During operation, a reverse bias is applied between the first conductivity-type Si layerand the light-absorption layer. Since the light-absorption layerhas a conductivity type, it is not depleted when a voltage is applied, but the intrinsic Si layerforming the Si waveguideis depleted. Therefore, it is possible to reduce a CR time constant. Furthermore, since the intrinsic Si layercan be formed on the first conductivity-type Si layerin a continuous manner, it is possible to reduce lattice defects. As a result, it is possible to suppress the dark current generated in the light-receiving element.