The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jun. 25, 2009
Tomoyuki Furuhata, Suwa, JP;
Hideyuki Akanuma, Minowa-machi, JP;
Hiroaki Nitta, Sakata, JP;
Seiko Epson Corporation, Tokyo, JP;
Abstract
A semiconductor device includes: a semiconductor substrate having a first conductivity type; a well having a second conductivity type and provided inside the semiconductor substrate; a first impurity region having the first conductivity type and provided within the well; a second impurity region having the second conductivity type, provided inside the well and away from the first impurity region; and a third impurity region having a first conductivity type, provided surrounding the well and away from the second impurity region. In this semiconductor device, the well is formed to be deeper than the first impurity region, the second impurity region, and the third impurity region, in a thickness direction of the semiconductor substrate; and a minimum distance between the first impurity region and the second impurity region is smaller than a minimum distance between the second impurity region and the third impurity region.