The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jan. 04, 2008
Applicants:
Sung-kweon Baek, Suwon-si, KR;
Sang-ryol Yang, Hwaseong-si, KR;
Si-young Choi, Seongnam-si, KR;
Bon-young Koo, Suwon-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Jin-tae Noh, Suwon-si, KR;
Inventors:
Sung-kweon Baek, Suwon-si, KR;
Sang-ryol Yang, Hwaseong-si, KR;
Si-young Choi, Seongnam-si, KR;
Bon-young Koo, Suwon-si, KR;
Ki-hyun Hwang, Seongnam-si, KR;
Jin-tae Noh, Suwon-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A flash memory device including a lower tunnel insulation layer on a substrate, an upper tunnel insulation layer on the lower tunnel insulation layer, and a P-type gate on the upper tunnel insulation layer, wherein the upper tunnel insulation layer includes an amorphous oxide layer.