The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jun. 02, 2008
Shigeru Mori, Kanagawa, JP;
Hiroshi Tanabe, Kanagawa, JP;
Jun Tanaka, Kanagawa, JP;
NLT Technologies, Ltd., Kanagawa, JP;
Abstract
The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes COin the film, wherein, when an integrated intensity of a peak is expressed by (peak width at half height)×(peak height) in an infrared absorption spectrum, the integrated intensity of a CO-attributed peak which appears in the vicinity of a wave number of 2,340 cmis 8E-4 times or more with respect to the integrated intensity of an SiO-attributed peak which appears in the vicinity of a wave number of 1,060 cm.