The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Jun. 22, 2011
Applicants:

Takayuki Yoshida, Shiga, JP;

Kimihito Kuwabara, Kyoto, JP;

Takuma Motofuji, Osaka, JP;

Toshiyuki Fukuda, Kyoto, JP;

Inventors:

Takayuki Yoshida, Shiga, JP;

Kimihito Kuwabara, Kyoto, JP;

Takuma Motofuji, Osaka, JP;

Toshiyuki Fukuda, Kyoto, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/10 (2006.01); H01L 23/48 (2006.01); H01L 23/52 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor deviceformed on a semiconductor chip substratehas a plurality of circuit blocks made up of circuits each containing at least a metal oxide semiconductor (MOS) transistor, the circuit blocks being covered on top with a protective filmto protect the circuits. A plurality of bumpsare formed, at least via the protective film, only on circuit blocks whose current-carrying ability and threshold voltage do not satisfy predetermined values and which are in need of performance enhancement. The bumpsimpose stresses on the MOS transistors, increasing the mobility of the MOS transistorsand thereby improving the performance of the semiconductor device


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