The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
May. 14, 2008
Nobuaki Matsui, Kyoto, JP;
Atsushi Yamaguchi, Kyoto, JP;
Nobuaki Matsui, Kyoto, JP;
Atsushi Yamaguchi, Kyoto, JP;
Rohm Co., Ltd., Kyoto, JP;
Abstract
A semiconductor light-emitting device capable of increasing an amount of light irradiated to the outside is provided. A semiconductor light-emitting device () includes a substrate (), an n-type semiconductor layer (), a light-emitting layer (), a p-type semiconductor layer (), an n-side pad electrode (), an n-side pad electrode (), a p-side electrode (), a reflecting layer (), and a p-side pad electrode (). The n-side pad electrode () is electrically connected to the n-type semiconductor layer () via the n-side pad electrode (). The p-side pad electrode () is electrically connected to the p-type semiconductor layer () via the p-side electrode (). A connection surface () of the n-side pad electrode () connected to the n-type semiconductor layer () is arranged in a first area (Ar) closer to a short side () on an arrow B direction-side, and a connection surface () of the p-side pad electrode () connected to the p-type semiconductor layer () is arranged in a fourth area (Ar) closest to a short side () on an arrow A direction-side among the first area (Ar) to the fourth area (Ar) formed by equally dividing the substrate () into four.