The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Jul. 06, 2011
Applicants:

Wen-chau Liu, Tainan, TW;

Huey-ing Chen, Tainan, TW;

Tsung-han Tsai, Tainan, TW;

Tai-you Chen, Tainan, TW;

Chung-fu Chang, Tainan, TW;

Chi-hsiang Hsu, Tainan, TW;

Inventors:

Wen-Chau Liu, Tainan, TW;

Huey-Ing Chen, Tainan, TW;

Tsung-Han Tsai, Tainan, TW;

Tai-You Chen, Tainan, TW;

Chung-Fu Chang, Tainan, TW;

Chi-Hsiang Hsu, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
Abstract

The present invention is a multi-gas sensor and a method for fabricating the multi-gas sensor. The multi-gas sensor comprises a substrate, an epitaxial layer, a metal oxide layer, a first metal layer, a second metal layer and multiple third metal layers. The method for fabricating the multi-gas sensor comprises steps of forming an epitaxial layer on a substrate; etching the epitaxial layer to form a first epitaxial structure and a second epitaxial structure a fixed distance from the first epitaxial structure; forming a metal oxide layer on the first epitaxial structure; forming a first metal layer that has at least two metal layers on the second epitaxial structure; forming a second metal layer a fixed distance from the first metal layer on the second epitaxial structure; forming third metal layers respectively on the metal oxide layer, the first metal layer and the second metal layer.


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