The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Dec. 24, 2009
Yutaka Ohta, Tokyo, JP;
Yoshikazu Ooshika, Tokyo, JP;
Yutaka Ohta, Tokyo, JP;
Yoshikazu Ooshika, Tokyo, JP;
Dowa Electronics Materials Co., Ltd., Tokyo, JP;
Abstract
An object of the present invention is to provide a nitride semiconductor light-emitting device in which contact resistance generated between an n-contact layer and an n-side electrode is effectively reduced while maintaining satisfactory external quantum efficiency, and a method of efficiently producing the nitride semiconductor light-emitting device. Specifically, the present invention characteristically provides a nitride semiconductor light-emitting device having a semiconductor laminated body including an n-type laminate, a light-emitting layer and a p-type laminate, and an n-side electrode and a p-side electrode, characterized in that: the n-type laminate includes an n-contact layer made of an AlGaN material (0.7≦x≦1.0) and an n-clad layer provided on the n-contact layer; and an interlayer made of an AlGaN material (0≦y≦0.5) is provided on a partially exposed portion, on the light-emitting layer side, of the n-contact layer.