The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Nov. 28, 2007
Applicants:

Masatoshi Saito, Chiba, JP;

Yuki Nakano, Chiba, JP;

Hiroaki Nakamura, Chiba, JP;

Inventors:

Masatoshi Saito, Chiba, JP;

Yuki Nakano, Chiba, JP;

Hiroaki Nakamura, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 35/24 (2006.01); H01L 51/00 (2006.01); H01L 51/40 (2006.01); C07C 15/12 (2006.01); C07C 13/48 (2006.01);
U.S. Cl.
CPC ...
Abstract

An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided.


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