The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jul. 26, 2010
Tadataka Edamura, Hamamatsu, JP;
Kazuue Fujita, Hamamatsu, JP;
Akira Higuchi, Hamamatsu, JP;
Naota Akikusa, Hamamatsu, JP;
Masamichi Yamanishi, Hamamatsu, JP;
Tadataka Edamura, Hamamatsu, JP;
Kazuue Fujita, Hamamatsu, JP;
Akira Higuchi, Hamamatsu, JP;
Naota Akikusa, Hamamatsu, JP;
Masamichi Yamanishi, Hamamatsu, JP;
Hamamatsu Photonics K.K., Hamamatsu-shi, Shizuoka, JP;
Abstract
A semiconductor light emitting device including a semiconductor substrate and an active layer which is formed on the substrate and has a cascade structure formed by multistage-laminating unit laminate structureseach including an emission layerand an injection layeris configured. The unit laminate structurehas a first upper level L, a second upper level L, and a lower level Lin the emission layer, and an injection level Lin the injection layer, an energy interval between the levels Land Lis set to be smaller than the energy of an LO phonon, the layer thickness of the exit barrier layer is set in a range not less than 70% and not more than 150% of the layer thickness of the injection barrier layer, light is generated by emission transition in the emission layer, and electrons after the emission transition are injected from the level Linto the level Lof the emission layer of a subsequent stage via the level L. Accordingly, a semiconductor light emitting device using polaritons, capable of performing a light emitting operation by current injection, is realized.