The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Dec. 12, 2008
Erik Öjefors, Wuppertal, DE;
Peter Haring Bolivar, Wenden, DE;
Hartmut G. Roskos, Kronberg, DE;
Ullrich Pfeiffer, Wuppertal, DE;
Erik Öjefors, Wuppertal, DE;
Peter Haring Bolivar, Wenden, DE;
Hartmut G. Roskos, Kronberg, DE;
Ullrich Pfeiffer, Wuppertal, DE;
Johann Wolfgang Goethe-Universitat Frankfurt A.M., Frankfurt am Main, DE;
Abstract
The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.