The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jun. 06, 2011
Chungho Lee, Sunnyvale, CA (US);
Kuo-tung Chang, Saratoga, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Huaqiang Wu, Mountain View, CA (US);
Fred Cheung, San Jose, CA (US);
Chungho Lee, Sunnyvale, CA (US);
Kuo-Tung Chang, Saratoga, CA (US);
Hiroyuki Kinoshita, San Jose, CA (US);
Huaqiang Wu, Mountain View, CA (US);
Fred Cheung, San Jose, CA (US);
Spansion LLC, Sunnyvale, CA (US);
Abstract
Methods of forming a top oxide around a charge storage material layer of a memory cell and methods of improving quality of a top oxide around a charge storage material layer of a memory cell are provided. The method can involve providing a charge storage layer on a semiconductor substrate, a nitride layer on the charge storage layer, and a first poly layer on the nitride layer, and converting at least a portion of the nitride layer to a top oxide. By converting at least a portion of a nitride layer to a top oxide layer, the quality of the resultant top oxide layer can be improved.