The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8329592 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 11, 2012

Filed:

Sep. 09, 2009
Applicant:

Satoshi Inaba, Kanagawa, JP;

Inventor:

Satoshi Inaba, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a semiconductor device according to one embodiment includes: forming a mask material on a semiconductor substrate comprising first and second regions; forming a pattern of a core on the mask material in the first region; forming a sidewall spacer mask on a side surfaces of the core pattern and subsequently removing the core pattern; transferring a pattern of the sidewall spacer mask to the mask material in the first region after removing the core; and thereafter, carrying out trimming of the pattern of the sidewall spacer mask which is transferred to the mask material in the first region, and formation of a predetermined pattern on the mask material in the second region, simultaneously.


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Inaba, Satoshi. (2012). Method of fabricating semiconductor device, and photomask (U.S. Patent No. 8329592). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8329592

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