The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Mar. 18, 2010
Hideki Watanabe, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Tomoyuki Oki, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Hideki Watanabe, Kanagawa, JP;
Takao Miyajima, Kanagawa, JP;
Masao Ikeda, Kanagawa, JP;
Hiroyuki Yokoyama, Miyagi, JP;
Tomoyuki Oki, Kanagawa, JP;
Masaru Kuramoto, Kanagawa, JP;
Sony Corporation, Tokyo, JP;
Tohoku University, Miyagi, JP;
Abstract
A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.