The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jun. 10, 2009
Eishi Shiobara, Kanagawa, JP;
Keisuke Kikutani, Kanagawa, JP;
Kazuyuki Yahiro, Kanagawa, JP;
Kentaro Matsunaga, Kanagawa, JP;
Tomoya Oori, Kanagawa, JP;
Eishi Shiobara, Kanagawa, JP;
Keisuke Kikutani, Kanagawa, JP;
Kazuyuki Yahiro, Kanagawa, JP;
Kentaro Matsunaga, Kanagawa, JP;
Tomoya Oori, Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.