The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Jul. 31, 2011
Yuri Makarov, Richmond, VA (US);
Michael Spencer, Ithaca, NY (US);
Yuri Makarov, Richmond, VA (US);
Michael Spencer, Ithaca, NY (US);
Widetronix, Inc., Ithaca, NY (US);
Abstract
A method is described for the growth of high-quality epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, which comprises the steps of supplying original species SiH4 and CCl4 into a growth chamber, decomposing at elevated temperatures, producing decomposition product SiH2, SiH, Si, CCl3, or CCl2, producing interaction product HCl, CH3Cl, CH4, or SiH2Cl2, etching by one of the byproducts HCl to suppress Si nucleation, providing main species SiCl2 and CH4 at a cooled insert located on sides of a substrate holder and at a shower-head located on top of the substrate holder, in the growth chamber, with proper Si to C atom ratio and Si to Cl atom ratio, to suppress parasitic deposits, and depositing SiC on a substrate at a proper growth substrate temperature (1500 to 1800 centigrade range).