The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 11, 2012

Filed:

Feb. 19, 2009
Applicants:

Debasish Banerjee, Ann Arbor, MI (US);

Benjamin Alan Grayson, Ann Arbor, MI (US);

Minjuan Zhang, Ann Arbor, MI (US);

Masahiko Ishii, Okazaki, JP;

Inventors:

Debasish Banerjee, Ann Arbor, MI (US);

Benjamin Alan Grayson, Ann Arbor, MI (US);

Minjuan Zhang, Ann Arbor, MI (US);

Masahiko Ishii, Okazaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D 5/06 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method for producing a multi-layer photonic structure having at least one group of alternating layers of high index material and low index material may include, determining a characteristic property function for the multi-layer photonic structure, determining a thickness multiplier for the at least one group of alternating layers based on a comparison of the characteristic property function to a target profile, adjusting the characteristic property function with the determined thickness multiplier, and comparing an adjusted characteristic property function to the target profile, wherein, when the adjusted characteristic property function does not approximate the target profile, at least one additional group of layers is added to the multi-layer photonic structure.


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