The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Feb. 05, 2009
Curtis Dove, Pueblo, CO (US);
Cindy Dutton, Fallbrook, CA (US);
Greg Bauer, Livermore, CA (US);
Christopher Myers, San Diego, CA (US);
Mehdi Balooch, Berkeley, CA (US);
Curtis Dove, Pueblo, CO (US);
Cindy Dutton, Fallbrook, CA (US);
Greg Bauer, Livermore, CA (US);
Christopher Myers, San Diego, CA (US);
Mehdi Balooch, Berkeley, CA (US);
Asia Union Electronic Chemical Corporation, Kaohsiung County, TW;
Abstract
Methods for performing damage etch and texturing of single crystal silicon substrates, particularly for use as solar cells or photovoltaic cells. Damage etch with a TMAH solution followed by texturing using solution of KOH or NaOH mixed with IPA is particularly advantageous. The substitution of some of the IPA with ethylene glycol further improves results. Also disclosed is a process that combines both damage etch and texturing etch into a single step.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile