The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 11, 2012
Filed:
Oct. 18, 2011
Makoto Kasu, Atsugi, JP;
Toshiki Makimoto, Atsugi, JP;
Kenji Ueda, Atsugi, JP;
Yoshiharu Yamauchi, Kunitachi, JP;
Makoto Kasu, Atsugi, JP;
Toshiki Makimoto, Atsugi, JP;
Kenji Ueda, Atsugi, JP;
Yoshiharu Yamauchi, Kunitachi, JP;
Nippon Telegraph and Telephone Corporation, Tokyo, JP;
Abstract
A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.