The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Sep. 05, 2008
Kenichi Maruhashi, Tokyo, JP;
Masahiro Tanomura, Tokyo, JP;
Hidenori Shimawaki, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A power amplifier of the present invention comprises MOS transistor () having a gate length of 180 nm or less, and output matching circuit () connected to a drain terminal of MOS transistor (). Also, MOS transistor () is applied with voltage Vd_n normalized by a voltage value allowable in a DC state as a drain-source voltage, where Vd_n is in a range of 0.5 to 0.9. ZL (=RH+j·XL) represents a value equal to a load impedance when viewing the output matching circuit () from the drain terminal normalized by gate width W (mm) of MOS transistor (), and a real part (RL) of the ZL is RL>0.64×Vd_n+0.19 (Ω·mm), and RL<0.64×Vd_n+1.73 (Ω·mm).