The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Sep. 16, 2011
Toshiaki Edahiro, Yokohama, JP;
Toshiaki Edahiro, Yokohama, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell array, threshold voltages of memory cells being set lowest in an erase state and sequentially set higher according to data in a program state, a plurality of bit lines connected to the memory cells, a word line connected to the memory cells, and a control circuit. In a case where a first memory cell is programmed to a first threshold voltage that is lowest among threshold voltages in the program state, the control circuit is configured to charge a first bit line connected to the first memory cell to a third voltage between a first voltage applied to a bit line when a memory cell is programmed to a second threshold voltage higher than the first threshold voltage and a second voltage applied to a bit line when a memory cell is inhibited from being programmed.