The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Feb. 05, 2010
Applicants:
Aya Miyazaki, Yokohama, JP;
Mitsuaki Osame, Atsugi, JP;
Hiroyuki Miyake, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Inventors:
Aya Miyazaki, Yokohama, JP;
Mitsuaki Osame, Atsugi, JP;
Hiroyuki Miyake, Atsugi, JP;
Shunpei Yamazaki, Setagaya, JP;
Assignee:
Semiconductor Energy Laboratory Co., Ltd., Atsugi-shi, Kanagawa-ken, JP;
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device is provided, which comprises at least a cell including a plurality of memory elements connected in series. Each of the plurality of memory elements includes a channel formation region, a source and drain regions, a floating gate, and a control gate. Each of the source and drain regions is electrically connected to an erasing line through a semiconductor impurity region.