The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2012

Filed:

Apr. 29, 2009
Applicant:

Kyoung-wook Park, Gyeonggi-do, KR;

Inventor:

Kyoung-Wook Park, Gyeonggi-do, KR;

Assignee:

Hynix Semiconductor, Inc., Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A phase change memory device includes a plurality of programming current driving blocks each of which is configured to provide a corresponding phase change memory cell with a programming current corresponding to input data and a programming current adjusting block commonly connected to the plurality of programming current driving blocks and configured to generate a control voltage to adjust the programming current.


Find Patent Forward Citations

Park, Kyoung-Wook. (2012). Phase change memory device (U.S. Patent No. 8325514). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8325514

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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