The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Sep. 29, 2010
Jianhua Yang, Palo Alto, CA (US);
Wei Yi, Mountain View, CA (US);
Michael Josef Stuke, Palo Alto, CA (US);
Shih-yuan Wang, Palo Alto, CA (US);
Jianhua Yang, Palo Alto, CA (US);
Wei Yi, Mountain View, CA (US);
Michael Josef Stuke, Palo Alto, CA (US);
Shih-Yuan Wang, Palo Alto, CA (US);
Hewlett-Packard Development Company, L.P., Houston, TX (US);
Abstract
A memristor includes a first electrode of a nanoscale width; a second electrode of a nanoscale width; and an active region disposed between the first and second electrodes. The active region has a both a non-conducting portion and a source of dopants portion induced by electric field. The non-conducting portion comprises an electronically semiconducting or nominally insulating material and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field. The non-conducting portion is in contact with the first electrode and the source of dopants portion is in contact with the second electrode. The second electrode comprises a metal reservoir for the dopants. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.