The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Feb. 17, 2011
Hui-huang Chen, Changhua County, TW;
Chih-yuan Chen, Yilan County, TW;
Sheng-fu Yang, Tainan, TW;
Chun-cheng Chen, Changhua County, TW;
Hui-Huang Chen, Changhua County, TW;
Chih-Yuan Chen, Yilan County, TW;
Sheng-Fu Yang, Tainan, TW;
Chun-Cheng Chen, Changhua County, TW;
Powerchip Technology Corporation, Hsinchu, TW;
Abstract
A dynamic random access memory cell having vertical channel transistor includes a semiconductor pillar, a drain layer, an assisted gate, a control gate, a source layer, and a capacitor. The vertical channel transistor has an active region formed by the semiconductor pillar. The drain layer is formed at the bottom of the semiconductor pillar. The assisted gate is formed beside the drain layer, and separated from the drain layer by a first gate dielectric layer. The control gate is formed beside the semiconductor pillar, and separated from the active region by a second gate dielectric layer. The source layer is formed at the top of the semiconductor pillar. The capacitor is formed to electrical connect to the source layer.