The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Dec. 22, 2009
Hui-chang Moon, Yongin-si, KR;
Han-soo Kim, Suwon-si, KR;
Won-seok Cho, Suwon-si, KR;
Jae-hoon Jang, Seongnam-si, KR;
Ki-hyun Kim, Hwaseong-si, KR;
Hui-chang Moon, Yongin-si, KR;
Han-soo Kim, Suwon-si, KR;
Won-seok Cho, Suwon-si, KR;
Jae-hoon Jang, Seongnam-si, KR;
Ki-hyun Kim, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
A flash memory device having a vertical channel structure. The flash memory device includes a substrate having a surface that extends in a first direction, a channel region having a pillar shape and extending from the substrate in a second direction that is perpendicular to the first direction, a gate dielectric layer formed around the channel region, a memory cell string comprising a plurality of transistors sequentially formed around the channel region in the second direction, wherein the gate dielectric layer is disposed between the plurality of transistors and the channel region, and a bit line connected to one of the plurality of transistors, and surrounding a side wall and an upper surface of one end of the channel region so as to directly contact the channel region.