The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2012

Filed:

Mar. 24, 2011
Applicants:

Michael Macdougal, Camarillo, CA (US);

Jonathan Geske, Ventura, CA (US);

John E. Bowers, Goleta, CA (US);

Inventors:

Michael MacDougal, Camarillo, CA (US);

Jonathan Geske, Ventura, CA (US);

John E. Bowers, Goleta, CA (US);

Assignee:

Aerius Photonics LLC, Ventura, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of detectors made using lattice matched photoabsorbing layers are disclosed. A photodiode apparatus in accordance with one or more embodiments of the present invention comprises an indium phosphide substrate, and a photoabsorbing region comprising at least an indium gallium arsenide antimonide nitride (InGaAsSbN) layer, wherein the InGaAsSbN layer has a thickness of at least 100 nanometers and is nominally lattice-matched to the indium phosphide substrate.


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