The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Nov. 04, 2010
Applicant:
Ko-wei Chien, Hsinchu, TW;
Inventor:
Ko-Wei Chien, Hsinchu, TW;
Assignee:
Advanced Optoelectric Technology, Inc., Hsinchu Hsien, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/60 (2010.01);
U.S. Cl.
CPC ...
Abstract
A plurality of reflective nanometer-structures formed on the reflective surface of a semiconductor light emitting device package increases light emitting efficiency. Every pitch between each reflective nanometer-structure has an interval P shorter than the half wavelength of the visible light. Moreover, each of the plurality of reflective nanometer-structures has a depth H, wherein the ratio of the depth H over the interval P is not less than 2.