The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8324634 B1

PDF
Full Text
Expired
Date of Patent:
Dec. 04, 2012

Filed:

Apr. 29, 2010
Applicants:

Xilin Su, Shenzhen, CN;

Hongpo HU, Shenzhen, CN;

Chunlin Xie, Shenzhen, CN;

Wang Zhang, Shenzhen, CN;

Qiang Wang, Shenzhen, CN;

Inventors:

Xilin Su, Shenzhen, CN;

Hongpo Hu, Shenzhen, CN;

Chunlin Xie, Shenzhen, CN;

Wang Zhang, Shenzhen, CN;

Qiang Wang, Shenzhen, CN;

Assignee:

BYD Company Limited, Shenzhen, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/01 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device comprises a substrate, a conductive layer deposited on a substrate and an epitaxial layer deposited on the conductive layer. The conductive layer is patterned to include a first pattern. The first pattern includes a major surface and a plurality of grids defined in the major surface. The major surface includes a plurality of first lines and a connecting portion. The connecting portion is connected to an electrode. The epitaxial layer covers the grids and the first lines between the adjacent grids.


Find Patent Forward Citations

Su, Xilin. (2012). Epitaxial wafer and manufacturing method thereof (U.S. Patent No. 8324634). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8324634

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