The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Feb. 29, 2008
Sun-il Kim, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Dong-hun Kang, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Sun-il Kim, Yongin-si, KR;
I-hun Song, Seongnam-si, KR;
Young-soo Park, Yongin-si, KR;
Dong-hun Kang, Yongin-si, KR;
Chang-jung Kim, Yongin-si, KR;
Jae-chul Park, Seoul, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
Provided is a channel layer for a thin film transistor, a thin film transistor and methods of forming the same. A channel layer for a thin film transistor may include IZO (indium zinc oxide) doped with a transition metal. A thin film transistor may include a gate electrode and the channel layer formed on a substrate, a gate insulating layer formed between the gate electrode and channel layer, and a source electrode and a drain electrode which contact ends of the channel layer.