The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Aug. 24, 2010
William French, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Philipp Lindorfer, San Jose, CA (US);
William French, San Jose, CA (US);
Peter J. Hopper, San Jose, CA (US);
Vladislav Vashchenko, Palo Alto, CA (US);
Philipp Lindorfer, San Jose, CA (US);
National Semiconductor Corporation, Santa Clara, CA (US);
Abstract
Methods and structures provide galvanic isolation for electrical systems using a wide oxide filled trench, and that allows power across the system divide with a transformer, and that transmits data at a high baud rate using an optical link. The system solution allows the integration of all of these elements onto a single semiconductor substrate in contrast to currently available galvanic isolation systems that require multiple individual silicon die that are connected by wire bonds and are relatively slow.