The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Aug. 21, 2009
Takahisa Kato, Tokyo, JP;
Yasuhiro Shimada, Sagamihara, JP;
Takahisa Kato, Tokyo, JP;
Yasuhiro Shimada, Sagamihara, JP;
Canon Kabushiki Kaisha, Tokyo, JP;
Abstract
A silicon processing method includes: forming a mask pattern on a principal plane of a single-crystal silicon substrate; and applying crystal anisotropic etching to the principal surface to form a structure including a (111) surface and a crystal surface equivalent thereto and having width Wand length L. The principal plane includes a (100) surface and a crystal surface equivalent thereto or a (110) surface and a crystal surface equivalent thereto. A determining section for determining the width Wof the structure is formed in the mask pattern. The width of the determining section for the width Wof the mask pattern is width W. The width of the mask pattern other than the determining section is larger than the width Wover a length direction of the mask pattern.