The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Nov. 15, 2010
Applicants:
Guoping Mao, Woodbury, MN (US);
Michael W. Bench, Eagan, MN (US);
Zai-ming Qiu, Woodbury, MN (US);
Xiaoguang Sun, Woodbury, MN (US);
Inventors:
Guoping Mao, Woodbury, MN (US);
Michael W. Bench, Eagan, MN (US);
Zai-Ming Qiu, Woodbury, MN (US);
Xiaoguang Sun, Woodbury, MN (US);
Assignee:
3M Innovative Properties Company, St. Paul, MN (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract
A novel etching agent for etching II-VI semiconductors is provided. The etching agent includes an aqueous solution of potassium permanganate and phosphoric acid. This etching solution can etch II-VI semiconductors at a rapid rate but tend to be much less reactive with III-V semiconductors. The provided agent can be used in a method for etching II-VI semiconductors.