The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Apr. 11, 2008
Applicants:
Maria Luisa Calvo-munoz, Grenoble, FR;
Janos Farkas, Saint Ismier, FR;
Inventors:
Maria Luisa Calvo-Munoz, Grenoble, FR;
Janos Farkas, Saint Ismier, FR;
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 21/44 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present invention provides a process for forming a capping layer on a conducting interconnect for a semiconductor device, the process comprising: providing a substrate comprising one or more conductors in a dielectric layer, the conductors having an oxide layer at their surface; exposing the surface of the substrate to a vapor of β-diketone or a β-ketoimine; and depositing a capping layer on the surface of at least some of the one or more conductors. The present invention further provides an apparatus for carrying out this method.