The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 04, 2012

Filed:

Jul. 20, 2011
Applicants:

Masato Endo, Ashigarakami-gun, JP;

Tatsuya Kato, Yokkaichi, JP;

Inventors:

Masato Endo, Ashigarakami-gun, JP;

Tatsuya Kato, Yokkaichi, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
Abstract

A semiconductor device includes a plurality of first interconnection layers which are provided in an insulating layer and formed in a pattern having a width and space smaller than a resolution limit of an exposure technique, and a second interconnection layer which is provided between the first interconnection layers in the insulating layer and has a width larger than that of a first interconnection layer. A space between the second interconnection layer and each of first interconnection layers adjacent to both sides of the second interconnection layer equals the space between the first interconnection layers.


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Endo, Masato. (2012). Semiconductor device and manufacturing method thereof (U.S. Patent No. 8324094). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8324094

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