The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Mar. 19, 2010
Applicants:
Chongwu Zhou, Arcadia, CA (US);
Lewis Gomez DE Arco, Los Angeles, CA (US);
Akshay Kumar, Los Angeles, CA (US);
Inventors:
Chongwu Zhou, Arcadia, CA (US);
Lewis Gomez De Arco, Los Angeles, CA (US);
Akshay Kumar, Los Angeles, CA (US);
Assignee:
University of Southern California, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
Among others, techniques are described for forming nanotubes. In one aspect, a method includes forming a base layer of a transition metal on a substrate. The method also includes heating the substrate with the base layer in a mixture of gases to grow nanotubes on the base layer.
Zhou, Chongwu. (2012). Scalable light-induced metallic to semiconducting conversion of carbon nanotubes and applications to field-effect transistor devices (U.S. Patent No. 8324087). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8324087
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile