The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Mar. 01, 2010
Jung-in Kim, Seoul, KR;
Jae-hee OH, Seongnam-si, KR;
Hyunho Kim, Suwon-is, KR;
Ji-hyun Jeong, Seoul, KR;
Jung-in Kim, Seoul, KR;
Jae-Hee Oh, Seongnam-si, KR;
Hyunho Kim, Suwon-is, KR;
Ji-Hyun Jeong, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
A variable resistance memory device, and a method of forming the same. The method may include forming a lower electrode on a substrate, stacking a first etch stop layer and a second etch stop layer on the substrate, forming an insulating layer on the second etch stop layer, forming a recessing region to expose the lower electrode by patterning the insulating layer and the first and second etch stop layer, forming a variable resistance material layer in the recess region, and forming an upper electrode on the variable resistance material layer. The first etch stop layer can have an etching selectivity with respect to the second etch stop layer.