The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Sep. 30, 2011
Pamela J. Welch, Mesa, AZ (US);
Wen Ling M. Huang, Scottsdale, AZ (US);
David G. Morgan, Phoenix, AZ (US);
Hernan A. Rueda, Phoenix, AZ (US);
Vishal P. Trivedi, Chandler, AZ (US);
Pamela J. Welch, Mesa, AZ (US);
Wen Ling M. Huang, Scottsdale, AZ (US);
David G. Morgan, Phoenix, AZ (US);
Hernan A. Rueda, Phoenix, AZ (US);
Vishal P. Trivedi, Chandler, AZ (US);
Freescale Semiconductors, Inc., Austin, TX (US);
Abstract
Methods are disclosed for forming an improved varactor diode having first and second terminals. The methods include providing a substrate having a first surface in which are formed isolation regions separating first and second parts of the diode. A varactor junction is formed in the first part with a first side coupled to the first terminal and a second side coupled to the second terminal via a sub-isolation buried layer (SIBL) region extending under the bottom and partly up the sides of the isolation regions to a further doped region that is ohmically connected to the second terminal. The first part does not extend to the SIBL region. The varactor junction desirably comprises a hyper-abrupt doped region. The combination provides improved tuning ratio, operating frequency and breakdown voltage of the varactor diode while still providing adequate Q.