The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Dec. 17, 2010
Kenichi Kazama, Nagano, JP;
Tsunehiro Nakajima, Nagano, JP;
Koji Sasaki, Nagano, JP;
Akio Shimizu, Nagano, JP;
Takashi Hayashi, Nagano, JP;
Hiroki Wakimoto, Nagano, JP;
Kenichi Kazama, Nagano, JP;
Tsunehiro Nakajima, Nagano, JP;
Koji Sasaki, Nagano, JP;
Akio Shimizu, Nagano, JP;
Takashi Hayashi, Nagano, JP;
Hiroki Wakimoto, Nagano, JP;
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Abstract
A method of producing a semiconductor device that has a silicon substrate including a first major surface and a second major surface thereof, a front surface device structure being formed in a region of the first major surface, the method has a step of forming a rear electrode in a region of the second major surface, which includes evaporating or sputtering aluminum-silicon onto the second major surface to form an aluminum silicon film as a first layer of the rear electrode, the aluminum silicon film having a silicon concentration of at least 2 percent by weight when the thickness thereof is less than 0.3 μm.