The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Aug. 16, 2010
Hyun-uk OH, Yongin, KR;
Hyun-Uk Oh, Yongin, KR;
Samsung Display Co., Ltd., , KR;
Abstract
In a method of manufacturing a display device, a first insulating layer is formed on a semiconductor pattern. Ions of a first concentration are injected into source and drain domains of the semiconductor pattern and a lower electrode of the semiconductor pattern by using a mask pattern that selectively overlaps a channel domain of the semiconductor pattern and is positioned on the top of the first insulating layer. The mask pattern is removed. An ion injection process of injecting ions of a second concentration lower than the first concentration into the semiconductor pattern of the channel domain is directly performed in the first insulating layer. A gate electrode that overlaps the channel domain is formed on the top of the first insulating layer. An upper electrode that overlaps the lower electrode is formed on the top of the first insulating layer.