The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Oct. 19, 2010
Adam William Saxler, Durham, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
Adam William Saxler, Durham, NC (US);
Albert Augustus Burk, Jr., Chapel Hill, NC (US);
Cree, Inc., Durham, NC (US);
Abstract
A semiconductor structure includes a first layer of a nitride semiconductor material, a substantially unstrained nitride interlayer on the first layer of nitride semiconductor material, and a second layer of a nitride semiconductor material on the nitride interlayer. The nitride interlayer has a first lattice constant and may include aluminum and gallium and may be conductively doped with an n-type dopant. The first layer and the second layer together have a thickness of at least about 0.5 μm. The nitride semiconductor material may have a second lattice constant, such that the first layer may be more tensile strained on one side of the nitride interlayer than the second layer may be on the other side of the nitride interlayer.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile