The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Mar. 10, 2010
Mamoru Terai, Tokyo, JP;
Takuya Hagiwara, Tokyo, JP;
Mamoru Terai, Tokyo, JP;
Takuya Hagiwara, Tokyo, JP;
Renesas Electronics Corporation, Kanagawa, JP;
Abstract
The present invention relates to a method of forming a resist pattern for obtaining an electronic device in which a development defect is eliminated, and aims at providing a process that is simple and low-cost, and can impart a high hydrophobicity capable of high-speed scan. It relates to a method of forming a resist pattern including the steps of: providing immersion exposure to a resist film; solubilizing the resist film subjected to the immersion exposure in an alkaline developer; developing the resist film solubilized in the alkaline developer by alkali immersion; and performing a deionized water rinse treatment on the developed resist film in this order, wherein the step of solubilization in the alkaline developer is performed by exposing the resist film subjected to the immersion exposure to ozone gas without irradiating ultraviolet rays (hereinafter, sometimes referred to as ozone treatment).