The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 04, 2012
Filed:
Jun. 18, 2010
Applicant:
Tae-hwan OH, Yongin-si, KR;
Inventor:
Tae-Hwan Oh, Yongin-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01);
U.S. Cl.
CPC ...
Abstract
Provided are a semiconductor structure and a method of fabricating a semiconductor device. The method includes: preparing a substrate or an etch-target layer which is to be patterned; forming a first anti-reflective coating, which contains silsesquioxane resin and a cross-linking catalyst, on the substrate or the etch-target layer; forming an anti-penetration film and a second anti-reflective coating by causing a cross-linking reaction in a region of the first anti-reflective coating; and forming a photoresist pattern on the anti-penetration film.